FREMONT, Calif. — Spin Memory, Inc.
(Spin Memory), the leading MRAM developer, today announced a commercial
agreement with Applied Materials, Inc. (Applied) to create a
comprehensive embedded MRAM solution. The solution brings together
Applied’s industry-leading deposition and etch capabilities with Spin
Memory’s MRAM process IP.
Key elements of the offering include Applied innovations in PVD and etch process technology, Spin Memory’s revolutionary Precessional Spin CurrentTM
(PSCTM) structure (also known as the Spin Polarizer), and
industry-leading perpendicular magnetic tunnel junction (pMTJ)
technology from both companies. The solution is designed to allow
customers to quickly bring up an embedded MRAM manufacturing module and
start producing world-class MRAM-enabled products for both non-volatile
(flash-like) and SRAM-replacement applications. Spin Memory intends to
make the solution commercially available from 2019.
“In the AI and IoT era, the industry needs high-speed, area-efficient non-volatile memory like never before,” said Tom Sparkman, CEO at Spin Memory. “Through our collaboration with Applied Materials, we will bring the next generation of STT-MRAM to market and address this growing need for alternative memory solutions.”
“Our industry is driving a new wave of computing that will result in billions of sensors and a dramatic increase in data generation,” said Steve Ghanayem, senior vice president of New Markets and Alliances at Applied Materials. “As a result, we are seeing a renaissance in hardware innovation, from materials to systems, and we are excited to be teaming up with Spin Memory to help accelerate the availability of a new memory.”
About the PSC
The PSC structure increases the spin-torque efficiency of any MRAM device by 40-70 percent — enabling any MRAM to achieve dramatically higher data retention while consuming less power. Applications set to see significant benefits of MRAM with the PSC structure include: datacenters, IoT and autonomous driving. Because it requires no additional materials or tools than those already used in the production of STT-MRAM – the PSC structure adds virtually no complexity or cost for customers and can be seamlessly incorporated into any MRAM manufacturer’s existing process.
About Applied Materials
Applied Materials, Inc. (Nasdaq: AMAT) is the leader in materials engineering solutions used to produce virtually every new chip and advanced display in the world. Our expertise in modifying materials at atomic levels and on an industrial scale enables customers to transform possibilities into reality. At Applied Materials, our innovations make possible the technology shaping the future. Learn more at www.appliedmaterials.com.
About Spin Memory
Spin Memory (previously Spin Transfer Technologies) is the preeminent MRAM IP supplier. Through collaboration with industry leaders, Spin Memory is transforming the semiconductor industry by solving memory challenges vital for AI, ADAS, 5G, IoT and more. Spin Memory’s disruptive STT-MRAM technologies and products provide SRAM-like speed and endurance that can replace SRAM and ultimately DRAM in both embedded and stand-alone applications. For more information, please visit www.spinmemory.com.
“In the AI and IoT era, the industry needs high-speed, area-efficient non-volatile memory like never before,” said Tom Sparkman, CEO at Spin Memory. “Through our collaboration with Applied Materials, we will bring the next generation of STT-MRAM to market and address this growing need for alternative memory solutions.”
“Our industry is driving a new wave of computing that will result in billions of sensors and a dramatic increase in data generation,” said Steve Ghanayem, senior vice president of New Markets and Alliances at Applied Materials. “As a result, we are seeing a renaissance in hardware innovation, from materials to systems, and we are excited to be teaming up with Spin Memory to help accelerate the availability of a new memory.”
About the PSC
The PSC structure increases the spin-torque efficiency of any MRAM device by 40-70 percent — enabling any MRAM to achieve dramatically higher data retention while consuming less power. Applications set to see significant benefits of MRAM with the PSC structure include: datacenters, IoT and autonomous driving. Because it requires no additional materials or tools than those already used in the production of STT-MRAM – the PSC structure adds virtually no complexity or cost for customers and can be seamlessly incorporated into any MRAM manufacturer’s existing process.
About Applied Materials
Applied Materials, Inc. (Nasdaq: AMAT) is the leader in materials engineering solutions used to produce virtually every new chip and advanced display in the world. Our expertise in modifying materials at atomic levels and on an industrial scale enables customers to transform possibilities into reality. At Applied Materials, our innovations make possible the technology shaping the future. Learn more at www.appliedmaterials.com.
About Spin Memory
Spin Memory (previously Spin Transfer Technologies) is the preeminent MRAM IP supplier. Through collaboration with industry leaders, Spin Memory is transforming the semiconductor industry by solving memory challenges vital for AI, ADAS, 5G, IoT and more. Spin Memory’s disruptive STT-MRAM technologies and products provide SRAM-like speed and endurance that can replace SRAM and ultimately DRAM in both embedded and stand-alone applications. For more information, please visit www.spinmemory.com.
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