Saturday, April 7, 2018

Samsung Electronics to double 3DNAND memory output capacity in China

[Nikkei Asian Review, March 28, 2018] SEOUL -- Samsung Electronics said Wednesday that it will invest $7 billion over three years to double production capacity for NAND flash memory in China, the top importer of South Korean semiconductors.

Samsung Electronics held a groundbreaking ceremony March 28 for a second production line at its Xi'an chip fabrication facility in China's Shaanxi Province.

The company will build a second line at its Xi'an fabrication facility in inland Shaanxi Province, lifting monthly capacity to the equivalent of 220,000 300mm silicon wafers by 2020. The new line is expected to make cutting-edge 3-D flash memory, which can hold much more data than conventional chips.

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