Friday, September 8, 2017

Entegris & Hubei Jingxing Sign Manufacturing Agreement For TEOS Supply In China

Entegris recently announced that it has signed an agreement with Hubei Jingxing Science & Technology, Incorporated, Co., Ltd. (Hubei Jingxing), a specialty chemical manufacturer in Suizhou (Hubei Province), China to manufacture Entegris high-purity deposition products. These high-purity deposition products include TEOS (tetraethyl orthosilicate), a material particularly critical to enabling 3D NAND technology which is used in semiconductor manufacturing to produce leading-edge, faster storage, and memory.



"Our partnership with Hubei Jingxing enables us to expand capability for Entegris in China and shorten the deposition materials supply chain for Chinese customers," stated Entegris Senior Vice President and General Manager of Specialty Chemicals and Engineered Materials, Stuart Tison. "We are proud to become the first international company to establish high-volume TEOS manufacturing capacity in China, Entegris UltraPur™ TEOS , which is critical for the manufacture of 3D NAND and supports the overall growth of the semiconductor industry in the country."

"Our partnership with Entegris allows us to further expand our competencies in high-purity materials manufacturing," said Hubei Jinxing General Manager, Ye Gang. "Additionally, we will adopt manufacturing processes to match existing Entegris processes, as well as employ their quality control system to produce the most consistent results."
TECHCET ANALYSIS: China continues to invest to support the 2D-NAND to 3D-NAND transition tracked by TECHCET in terms of wafer starts and materials, equipment and delivery equipment. According to TECHCET's Critical Materials Report on advanced dielectric precursors, the materials market (ALD, CVD and SOD) was roughly US$365M in 2016, should break $400M in 2017, and is estimated to reach $560M for 2021 by a forecasted CAGR of 11% over the period as a whole. TEOS is a versatile CVD precursor in semiconductor manufacturing, is used across all nodes for STI and gap-fill with demand estimated at almost $30M, and should out-grow wafer starts due to new applications on the horizon. Growth is clearly driven by dielectric Plasma ALD deposition in multiple patterning, and by dielectric CVD in the 3D-NAND dielectric layer stack (48-72 layers today). 

More information on Dielectric Precursors : LINK

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