Intel says embedded spin-transfer torque (STT)-MRAM on its 22 nm FFL process is ready for high-volume manufacturing. Embedded MRAM is considered a promising technology for applications such as internet of things (IoT) devices. In a paper presented at the International Solid-State Circuits Conference on Tuesday, Intel said that it has used a “write-verify-write” scheme and a two-stage current sensing technique to create 7-Mb perpendicular STT-MRAM arrays in its 22FFL FinFET process. The embedded MRAM technology achieves 10-year retention at 200 °C and endurance of more than 10^6 switching cycles. The arrays have demonstrated write endurance of more than 1E06 cycles and read disturb error rate of more than 1E12 cycles.
In a separate ISSCC paper presented Tuesday, Intel also described the development of resistive RAM (ReRAM) as a low-cost option for embedded non-volatile memory for SoCs used in IoT and automotive. The embedded ReRAM technology — also implemented in a 22-nm FinFET process — demonstrate what the company says is the smallest and highest-density ReRAM subarray and material innovations to allow low-voltage switching without impact to transistor reliability.
Source: EETimies (LINK)
By Abhiskekumar Thakur
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