Spin Transfer Technologies, Inc. (STT) and Tokyo Electron Ltd. (TEL) have today signed an agreement for a collaborative engineering program for next-gen SRAM and DRAM-class ST-MRAM devices.
TEL PVD EXIM have explored its unique capabilities to form multi-layer magnetic tunnel junction (MTJ) stacks for spin-transfer-torque magnetoresistive random access memories (STT-MRAM).
The agreement aims to further the advance of ST-MRAM, a new class of high-performance, persistent memory devices, to provide previously unachievable levels of speed, density, and endurance. The combination of STT’s ST-MRAM technology and TEL’s advanced PVD MRAM deposition tool will allow the companies to quickly develop processes for the highest density and endurance devices.
Source: Evertiq LINK
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