Thursday, June 27, 2019

SK Hynix: SK Hynix Starts Production of 128-Layer 4D NAND, 176-Layer Being Developed

SK Hynix has announced it has finished development of its 128-layer 1 terabit 3D TLC NAND flash. The new memory features the company's charge trap flash (CTF) design, along with the peripheral under cells (PUC) architecture that the company calls '4D' NAND, announced some time ago. The new 128-layer TLC NAND flash devices will ship to interested parties in the second half of this year, and SK Hynix intends to offer products based on the new chips in 2020.1 Tb 128-Layer '4D' TLC NANDSK Hynix's 1 Tb 128-layer TLC NAND chip features four planes as well as a 1400 MT/s interface at 1.2 Volts. 

"SK Hynix has secured the fundamental competitiveness of its NAND business with this 128-Layer 4D NAND," said Executive Vice President Jong Hoon Oh, head of global sales & marketing. "With this product, with the industry's best stacking and density, we will provide customers with a variety of solutions at the right time."
rSource: Anandtech LINK

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