Thursday, April 20, 2017

3D-NAND and DRAM Dominate sub 22nm-node IC Fabrication

What Do Memory Chips, IoT and China Have in Common? Semiconductor Materials Demand Driven by Increases in Multiple Segments

3D-NAND and DRAM Dominate <22nm-node IC Fabrication
San Diego, CA, April 20: TECHCET CA points to growing demand for process materials, driven by three key factors - advanced memory chips ramping, legacy devices that fuel the IoT, and a robust China market. Advanced memory ICs will outpace the rest of semiconductor device products, increasing to 70% of total wafer starts by 2020. Consequently, demand for low temperature materials, ALD/CVD dielectrics and metal precursors will also rise strongly, as disclosed in a new report from TECHCET, "Semiconductor Device Trends and Process Materials Requirements."
Application details of where, how, why and when materials are needed for leading edge devices are featured in the report, along with recent developments concerning the IoT and China markets. Specifics on Xpoint memory, 3D NAND (Toshiba, Samsung, SK Hynix, Intel/Micron), Phase Change Memory, FeRAM and associated materials, are included.
For more on process material trends and needs, see TECHCET's report, available at, or attend the Critical Materials Conference, May 11-12 in Richardson, TX, featuring speakers from Intel, IBM, Samsung, ONSemiconductor, Cypress, Linde, Air Liquide & CoorsTek; among more than 20 powerful presentations.  
~3 weeks left to Register for this highly differentiated program focused on actionable technical & supply-chain information related to critical materials. 
For more info on Membership or the Conference, please go to 
email or call 1-480-382-8336 x1 

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