Tokyo,
Japan and Espoo, Finland - 30 January 2017 - Hitachi High-Technologies
Corporation (TSE:8036, Hitachi High-Tech) and Picosun Oy announce a
revolutionary technological co-operation in plasma-enhanced atomic layer
deposition (PE-ALD). The aim of this co-operation is to bring thin film
coating technologies to a completely new level. Hitachi High-Tech’s and
Picosun’s joint breakthrough, the novel Microwave Electron Cyclotron
Resonance (ECR) ALD technology will disrupt all advanced semiconductor
industries.
Promotion Video: MECRALD - novel, revolutionary plasma-enhanced ALD technology By Hitachi High-Technologies and Picosun. (youtube.com)
In
the PE-ALD reactor, Hitachi High-Tech’s powerful ECR plasma generator
is integrated with Picosun’s industry-proven, digitally controlled ALD
system. Consequently, the quality of the deposited materials is
substantially better, and the deposition process is much more precise
than existing traditional ALD and plasma-enhanced ALD methods.
Some superior results for various nitride and oxide films have been confirmed with 300 mm semiconductor wafers so far and some other process applications are under evaluation.
Some superior results for various nitride and oxide films have been confirmed with 300 mm semiconductor wafers so far and some other process applications are under evaluation.
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