TSMC plans to enter risk production of its eMRAM (embedded Magnetoresistive Random Access Memory) chips in 2018 and eRRAM (embedded Resistive RAM) products in 2019 using a 22 nm production node, said the report, citing TSMC CTO Jack Sun.
Embedded memory (DRAM, MRAM, RRAM FRAM) is typically integrated in the vias of the Cu interconnects in a BEOL process. There are opportunities also in the FEOL like the IBM embedded deep trench capacitors used for a long time in gaming consoles or the recent development in ferroelectric non-volatile FETs by Globalfoundries & Co. (FeFETs).
MRAM does not mean a huge opportunity for ALD other than possibly a diffusion barrier of some sort. However, the RRAM cel is very similar to a MIM capacitor used for DRAM and one can expect the use of high-k dielectrics (HfO2, Ta2O5 etc.) as well as metal and metal nitrides (e.g. TiN).