TOKYO-Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has developed a prototype sample of 96-layer BiCS FLASH™ three-dimensional (3D) flash memory with a stacked structure*1, with 3-bit-per-cell (triple-level cell, TLC) technology. Samples of the new 96-layer product, which is a 256 gigabit (32 gigabytes) device, are scheduled for release in the second half of 2017 and mass production is targeted for 2018. The new device meets market demands and performance specifications for applications that include enterprise and consumer SSD, smartphones, tablets and memory cards.
Source: Toshiba LINK
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