Veeco Instruments Inc. today announced that Aledia, a developer and manufacturer of next-generation 3D LEDs for display applications based on its gallium-nitride-nanowires-on-silicon platform, has selected Veeco’s Propel® GaN MOCVD system to support advanced research and development. Aledia noted the tool’s large process window, single-wafer reactor technology and defect stability as key factors in its decision to adopt the Propel system.
“We believe that the opportunity for our breakthrough nanowire-LED display technology on large-area silicon is very large, and we need the best and most scalable technology available to support our continued R&D around 3D display applications—we believe Veeco is best positioned,” stated Giorgio Anania, CEO, chairman and co-founder of Aledia. “Veeco’s cutting-edge Propel system delivers unsurpassed results, and very good homogeneity throughout the entire wafer, making it the best choice and one we know will help us continue to push the limits of innovation.”
“We believe that the opportunity for our breakthrough nanowire-LED display technology on large-area silicon is very large, and we need the best and most scalable technology available to support our continued R&D around 3D display applications—we believe Veeco is best positioned,” stated Giorgio Anania, CEO, chairman and co-founder of Aledia. “Veeco’s cutting-edge Propel system delivers unsurpassed results, and very good homogeneity throughout the entire wafer, making it the best choice and one we know will help us continue to push the limits of innovation.”
Source: SolidState Technology (LINK)
Aleida 3D Microwire LED Technology
Aledia is the first company to grow high-density, coaxial gallium
nitride (GaN) microwires directly onto large-diameter 200mm silicon
wafers (extendable to 300mm wafers) using low-cost processes that are
fully compatible with the back end of line of today's semiconductor
foundries. When processed these nanowires become LEDs.
3D (Microwire) LEDs:
- Large, economical substrate
- Fast MOCVD growth process (low capital expenditure)
- Low materials consumption
- Existing high-volume silicon wafer fabs
- Light emission area = up to 3X the 2D area = more light/mm2 or less current density, less efficiency droop
- Multiple colors on one wafer or even on one chip