Spin Transfer Technologies, Inc. (STT) and Tokyo Electron Ltd. (TEL)
have today signed an agreement for a collaborative engineering program
for next-gen SRAM and DRAM-class ST-MRAM devices.
TEL PVD EXIM have explored its unique capabilities to form multi-layer magnetic
tunnel junction (MTJ) stacks for spin-transfer-torque magnetoresistive
random access memories (STT-MRAM).
The agreement aims to further the advance of ST-MRAM, a new class of
high-performance, persistent memory devices, to provide previously
unachievable levels of speed, density, and endurance. The combination of
STT’s ST-MRAM technology and TEL’s advanced PVD MRAM deposition tool
will allow the companies to quickly develop processes for the highest
density and endurance devices.
Source: Evertiq LINK
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