Lam Research Corporation (LRCX) recently recorded 0.37 percent change and currently at $93.32 is 54.25 percent away from its 52-week low and down -2.56 percent versus its peak. It has a past 5-day performance of 0.68 percent and trades at an average volume of 2.23M shares. The stock has a 1-month performance of 4 percent and is 18.41 percent year-to-date as of the recent close. There were about 159.63M shares outstanding which made its market cap $14.9B. The share price is currently 1.52 percent versus its SMA20, 4.94 percent versus its SMA50, and 17.49 percent versus its SMA200.
On August 09, 2016 Lam Research Corp. (LRCX) introduced an atomic layer deposition (ALD) process for depositing low-fluorine-content tungsten films, the latest addition to its industry-leading ALTUS® family of products. With the industry’s first low-fluorine tungsten (LFW) ALD process, the ALTUS Max E Series addresses memory chipmakers’ key challenges and enables the continued scaling of 3D NAND and DRAM devices. Building on Lam’s market-leading product portfolio for memory applications, the new system is gaining market traction worldwide, winning production positions at leading 3D NAND and DRAM manufacturers and placement at multiple R&D sites.
On August 09, 2016 Lam Research Corp. (LRCX) introduced an atomic layer deposition (ALD) process for depositing low-fluorine-content tungsten films, the latest addition to its industry-leading ALTUS® family of products. With the industry’s first low-fluorine tungsten (LFW) ALD process, the ALTUS Max E Series addresses memory chipmakers’ key challenges and enables the continued scaling of 3D NAND and DRAM devices. Building on Lam’s market-leading product portfolio for memory applications, the new system is gaining market traction worldwide, winning production positions at leading 3D NAND and DRAM manufacturers and placement at multiple R&D sites.
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