Monday, October 1, 2018

IDMs keen to develop advanced power devices with SiC, GaN

International IDMs including STMicrolectronics, Infineon and TI are aggressively developing power devices using third-generation compound semiconductor materials silicon carbide (SiC) and gallium nitride (GaN), seeking to secure a preemptive presence in the high-end market for new energy vehicle, datacenter and AI applications, according to industry sources. 

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